![]() For high-power conversion application, devices with vertical geometry are preferred over lateral geometry, since the former allows more current for a given chip area, therefore making it more economical and feasible solution for high-voltage and high-current application. Gallium nitride (GaN)-based devices have entered the power electronics market and are showing excellent progress in the medium power conversion application. TCAD Simulation of GaN-based Vertical FETs (HEMTs) ![]()
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